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RESEARCH GROUPS

Ferroelectric oxide films for energy and memory devices (FOXEM)

Ferroelectric oxide thin films, CMOS-compatible materials and emerging memory devices for energy-efficient electronics and advanced data technologies.

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Ferroelectric oxide films for future memory and energy-efficient devices

The Ferroelectric oxide films for energy and memory devices (FOXEM) group develops high-quality new ferroelectric materials compatible with industrial technologies, studying their properties from fundamental understanding to device-level implementation.

The electronics industry faces major bottlenecks in sustaining the growing demand for data storage, computation and communication devices. FOXEM investigates CMOS-compatible HfO2-based ferroelectrics and epitaxial oxide thin films as model systems to understand, optimize and integrate ferroelectric properties.

The group combines thin film growth, structural studies, advanced electrical characterization and prototyping of conventional and emerging memory devices within the ICMAB advanced materials research ecosystem.

Research challenges

FOXEM addresses the materials and device challenges required to make ferroelectric oxide films reliable, scalable and compatible with future energy-efficient electronics.

CMOS-compatible ferroelectrics

Developing HfO2-based ferroelectric oxides suitable for integration with established microelectronics technologies.

Energy-efficient memory

Exploring ferroelectric devices that can support ultrafast, low-power data storage and computing architectures.

Ultrathin film functionality

Understanding ferroelectricity, switching and reliability in oxide films at reduced thickness and nanoscale dimensions.

From model systems to devices

Connecting epitaxial oxide films, structure-property relationships and device prototypes for emerging applications.

Main research lines

The group works across complementary research lines spanning ferroelectric oxide development, silicon integration, ultrathin films, reliability and device prototyping.

Development of HfO2-based ferroelectric oxides

Design and growth of hafnia-based ferroelectric materials with properties suitable for advanced electronic applications.

Integration of oxides on silicon

Strategies to integrate functional oxide thin films with silicon-based platforms and microelectronic technologies.

Ferroelectricity in ultrathin films

Study of ferroelectric behaviour, polarization and switching in films approaching nanoscale thickness.

Epitaxial films for ferroelectric understanding

Use of epitaxial oxide thin films as model systems to understand structure-property relationships.

Ferroelectric reliability

Understanding and enhancing endurance, stability and reliability in ferroelectric oxide materials and devices.

Devices for ultrafast computing

Development of ferroelectric devices for energy-efficient ultrafast computing and memory architectures.

Materials, methods and scientific approach

FOXEM research links materials growth, structural analysis and electrical characterization to understand how ferroelectric oxide films can be controlled and integrated into functional devices.

The group studies hafnia-based ferroelectrics, epitaxial oxide films and silicon-compatible integration routes, with an emphasis on scalable materials concepts for next-generation memories and energy-efficient electronics.

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Thin film growth

Growth and optimization of ferroelectric oxide thin films with controlled structure, interfaces and functional behaviour.

Structural characterization

Structural studies of epitaxial and integrated oxide films to understand phase formation and material quality.

Electrical properties

Advanced characterization of ferroelectric switching, polarization, reliability and device-relevant electrical response.

Device prototyping

Prototyping of conventional and emerging ferroelectric memory devices for future electronic technologies.

People

Scientific researchers, postdoctoral researchers, PhD students and project researchers associated with the FOXEM research group.

Permanent Scientific Researchers

Postdoctoral Researchers

PhD Students and Project Researchers

Connected to the ICMAB research ecosystem

FOXEM contributes to ICMAB’s research in functional oxides, energy-efficient electronics, advanced thin films and memory devices.

Research Groups

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Materials for Electronics

Research line
Connect FOXEM research with ICMAB strategic activity in electronic materials and emerging devices.
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Contact and group website

For detailed information about FOXEM research activity, current projects, publications and opportunities, visit the external group website or contact the group through the corresponding ICMAB channels.

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Research Groups Overview

Ferroelectric oxide films for energy and memory devices

HfO2-based ferroelectrics, epitaxial oxide thin films, silicon integration, ultrathin film ferroelectricity and emerging memory devices.